rev.0 aug. 01, 2008 page 1 of 4 HL8333G gaalas laser diode ode2052-00 (m) rev.0 aug. 01, 2008 description the HL8333G is a high-power 0.8 m band gaalas laser diode with a tqw (t riple quantum well) structure. it is suitable as a light source for optical disk memories, card readers and various other types of optical equipment. features ? infrared light output: p = 820 to 840 nm ? high power: standard continuous operation at 40 mw (cw), pulsed operation at 50 mw ? built-in monitor photodiode ? single longitudinal mode ld pd 1 3 internal circuit package type ? HL8333G: g2 2 absolute maximum ratings (t c = 25c) item symbol ratings unit optical output power p o 40 mw pulse optical output power p o(pulse) 50 * mw ld reverse voltage v r(ld) 2 v pd reverse voltage v r(pd) 30 v operating temperature topr ?10 to +60 c storage temperature tstg ?40 to +85 c note: pulse condition : pulse width = 1 s, duty = 50% optical and electrical characteristics (t c = 25c) item symbol min typ max unit test conditions threshold current ith ? 40 70 ma ? slope efficiency s 0.4 0.5 0.9 mw/ma 24 (mw) / (i (32mw) ? i (8mw) ) operating current i op ? 120 160 ma p o = 40 mw beam divergence parallel to the junction // 7 10 14 p o = 40 mw, fwhm beam divergence perpendicular to the junction ? 18 22 32 p o = 40 mw, fwhm astigmatism a s ? 5 ? m p o = 4 mw, na = 0.4 lasing wavelength p 820 830 840 nm p o = 40 mw monitor current i s 20 100 130 a p o = 4 mw, v r(pd) = 5 v
HL8333G rev.0 aug. 01, 2008 page 2 of 4 typical characteristic curves 0200 160 120 80 40 50 40 30 20 10 0 60c 25c t c = 0c -20 02040 p o = 40 mw t c = 25c 0 10 20 30 40 50 0 40 80 120 160 200 60 0 10 20 30 40 50 820 825 835 840 830 60 845 p o = 4 mw v r(pd) = 5 v p o = 40 mw optical output power vs. foward current optical output power, p o (mw) foward current, i f (ma) case temperature, t c (c) monitor current vs. case temprature lasing wavelength vs. case temperature lasing wavelength, lp (nm) case temperature, t c (c) far field pattern relative intensity angle, ( ) perpendicular parallel -40 -30 -10 10 30 1.0 0.8 0.6 0.4 0.2 0 monitor current, i s ( a) 0 1020304050 10 100 20 30 50 60 threshold current vs. case temperature threshold current, ith (ma) case temperature, t c (c) 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 60 slope efficiency vs. case temperature slope efficiency, s (mw/ma) case temperature, t c (c)
HL8333G rev.0 aug. 01, 2008 page 3 of 4 package dimensions opj code jedec jeita mass (reference value) ld/g2 ? ? 1.1 g 1 2 3 1 2 3 9.0 +0 ?0.025 1.0 0.1 0.4 +0.1 ?0 (0.65) (90) 7.2 +0.3 ?0.2 6.2 0.2 ( 2.0) emitting point 2.45 1.5 0.1 9 1 3 ? 0.45 0.1 3.5 0.2 0.3 glass 2.54 0.35 as of july, 2002 unit: mm
HL8333G rev.0 aug. 01, 2008 page 4 of 4 cautions 1. opnext japan,inc.(opj) neither warrants nor grants licenses of any our rights or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. opj bears no responsibility for problems that may arise with third pa rty?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. opj makes every attempt to ensure that its products are of high quality and reliability. however, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly th reaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion cont rol, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used w ithin the ranges guaranteed by opj particularly for maximum rating, operating supply voltage range, heat radiation characte ristics, installation conditions and other characteristics. opj bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating opj product does not cause bodily injury, fire or other consequential damage due to operation of the opj product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any fo rm, the whole or part of this document without written approval from opj. 7. contact our sales office for any questions regarding this document or opj products. 1. the laser light is harmful to human body especially to eye no matter what directly or indirectly. the laser beam shall be observed or adjusted through infrared camera or equivalent. 2. this product contains gallium arsenide (gaas), which may se riously endanger your health even at very low doses. please avoid treatment which may creat e gaas powder or gas, such as disassembly or performing chemical experiments, when you handle the product. when disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. definition of items shown in this cas is in accordance w ith that shown in opto device databook issued by opj unless otherwise specified. sales offices op next ja p an, inc . taka g i bld g ., 3f, 1-3-9, iwamoto-cho, chi y oda-ku, tok y o 101-0032, japan tel: (03) 3865-5591 for the detail of opnext, inc., see the following homepage: ?2008 opnext japan, inc., all rights reserved. printed in japan. colophon 5.0 japan (japanese) http://www.opnext.com/jp/products/ other area (english) http://www.opnext.com/products/
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